国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B023/00（2）
发明人
公开年
申请年 2013（2）
专利权人

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L