国家/地区 韩国（3）
IPC部 B（3） C（3）
IPC大类 C01（3）
IPC小类 C01B（3） C23C（3） B01J（2）
IPC C01B031/02（3） C23C016/26（3） B01J019/08（2）
发明人 CHOI I S（2） LEE K J（2）
公开年 2013（2）
申请年 2011（3）
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（3）

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H