国家/地区 中国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y040/00（2）
发明人
公开年
申请年 2013（2） 
专利权人

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G