国家/地区 日本（3） 美国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/01（4）
发明人
公开年 2017（4）
申请年 2016（2） 
专利权人

Manufacture of nitrogen-doped graphene film used as conductive film, involves forming nitrogen-doped graphene film on base by irradiating base with plasma containing hydrocarbon, nitrogen, and oxygen having preset partial pressure.

OKIGAWA YUKI, YAMADA TAKATOSHI, ISHIHARA MASATOU, HASEGAWA MASATAKA

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Graphene film used for manufacture of composite for transistor, has wrinkle density of less than preset value.

AOTA N, AIDA H

Equipment for transferring graphene monolayer formed on alloy layer to substrate, has sensor for controlling level and pH of liquids, liquid outlet for draining liquids, stirring element for liquid mixture, and ramp for feeding in substrate.

ZURUTUZA E A, CENTENO P A, ALONSO R B, PESQUERA R A, DE LA FUENTE C J