国家/地区 中国（5）
IPC部 B（5）
IPC大类 B05（5）
IPC小类 B05D（5）
IPC B82Y030/00（5） B82Y040/00（5） C01B031/02（4）
B32B009/00（3） C01B031/00（3） C01B031/04（3）
C23C016/26（3） H01B001/04（3） B05D003/00（2）
B05D003/02（2） B05D005/12（2） B32B003/10（2）
B32B009/04（2） H01B001/00（2）
发明人
公开年 2011（3） 2012（2）
申请年 2011（5）
专利权人

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U