国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 LI M（3） LI X（3） TANG T（3）
WEN J（3）
公开年 2014（3）
申请年 2014（4）
专利权人 UNIV GUILIN TECHNOLOGY（4）

Preparation of N-type graphene field effect transistor involves mixing graphene, sodium nitrate and sulfuric acid, heating, adding nitric acid, depositing, drying, adding ethanol, spin coating, light reducing, and depositing gold electrode.

LI M, LI X, WEN J, TANG T, XIAO J

Photoreduction of fluorinated graphene film includes reacting graphene oxide thin film with xenon difluoride, putting fluorinated graphene thin film in quartz boat, putting in photoreduction device, introducing ammonia gas, and illuminating.

LI M, LI X, WEN J, TANG T

Preparation of nanotube-shaped composite material involves preparing graphene oxide dispersion, adding vitamin C to flask containing deionized water, stirring, adding aniline, stirring, adding graphene oxide dispersion, and stirring.

FAN X, YANG Z

Preparing graphene film, comprises mixing crystalline flake graphite, sodium nitrate and concentrated sulfuric acid in ice bath and then mixing, adding potassium permanganate and then heating, and adding heated mixture with water to stir.

TANG T, LI M, LI X, WEN J