国家/地区 美国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（2）
发明人 ZHOU C（3）
公开年 2015（2）
申请年 2014（3）
专利权人

Production of graphene used in production of graphene-based nanostructures, involves treating combination of substrate chosen from silicon, silicon carbide or metal and graphene precursor and converting obtained intermediate.

ZHOU C, SALGUERO T T

Graphene-composite functional material for preparing e.g. piezoresistive material, comprises sulfonated graphene-grafted poly-3,4-(ethylene dioxythiophene).

BAO Y, CHEN S, CHEN Z, WANG J, XU G, YANG C, XING C, ZHOU C, LOU J, ZHU T

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L