国家/地区 中国（3）
IPC部 B（3） C（3） H（2）
IPC大类 B82（3） C01（3） H01（2）
IPC小类 B82Y（3）
IPC B82Y030/00（3）
发明人 NOMOTO K（2） YUGAWA M（2） YUKAWA M（2）
公开年 2013（2）
申请年 2012（3）
专利权人 SEMICONDUCTO.（2）

Forming electrode material comprises forming layer including graphene oxide on first conductive layer, immersing first and second conductive layers in electrolyte and electrochemically reducing part of graphene oxide in first layer.

TODORIKI H, SAITO Y, KAWAKAMI T, NOMOTO K, YUKAWA M, TODOROKI H, YUGAWA M, YONEDA Y

Forming graphene oxide salt involves mixing graphite and oxidizer having alkali metal salt, ionizing oxidizer having alkali metal salt with acid solution, removing oxidizer, separating graphene oxide and reacting graphene oxide and base.

NOMOTO K, INOUE N, YUKAWA M, IKENUMA T, YUGAWA M

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S