国家/地区 韩国（4） 美国（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 C01B（4）
IPC C01B031/02（3） C01B031/04（2） H01G011/32（2）
发明人 GYOO K I（2） KYU Y I（2） NA K B（2）
公开年
申请年
专利权人 ELECTRONICS TELECOM RES INST（4）

Three-dimensional graphene structure preparation involves forming graphene precursor by heating carbohydrate and gas generator, forming graphene structure having cavity by carbonizing graphene precursor, and then forming nanopores.

KIM T, YOU I, KIM B N, KIM I G, JUNG S, PARK S, YOUNG K T, KYU Y I, NA K B, GYOO K I, HOON J S, JUN P S

Manufacturing electrode used for capacitor, comprises forming an oxidized graphene thin film by applying composition containing oxidized graphene on a substrate, and irradiating obtained graphene oxide film with light.

SUK Y Y, KYU Y I, HWAN S J, NA K B, GYOO K I, HONG S

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Manufacturing graphene used in electronic device, comprises mixing implant and graphite produced material and then heating, and peeling off graphene from obtained intercalation product including alkali metal or alkaline earth metal.

MIN G Y, GI J S, GYU Y I, BON G J