国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（3）
发明人
公开年
申请年 2021（2） 
专利权人

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S