国家/地区 美国（6） 中国（5） 世界知识产权组织（4） 日本（3） 欧洲专利局（EPO）（2） 韩国（2） 台湾（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC B32B009/04（6）
发明人 FAN F Y（2） FAN S（2） JIANG K（2）
LIN X（2） LIN X Y（2） XIAO L（2）
公开年 2012（4） 2011（2）
申请年 2011（6）
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Graphene/carbon nanotube composite structure comprises carbon nanotube film structure having carbon nanotubes or nanotube wires and micropores; and graphene film located on a surface of film structure, and covering all of the micropores.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K