国家/地区 韩国（3）
IPC部 C（3） B（2）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/00（3）
发明人
公开年
申请年
专利权人

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Graphene useful in power storage device e.g. display devices having at least one hole inside a ring-like structure formed by carbon and nitrogen or carbon and at least one element selected from Group 16 element and halogen.

HIROHASHI T, OGUNI T, KOKUNI T

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S