国家/地区 美国（4） 韩国（3） 中国（2） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 B（4） C（4） H（2）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C25F005/00（4）
发明人
公开年
申请年
专利权人

Production of graphene film used in nanoelectronics, involves forming catalyst film on conductive support, forming graphene film on catalyst film, and electrolytically removing catalyst film from support.

BOTTE G G

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Method for transferring graphene on substrate used in electronic device, involves depositing graphene on side of metal substrate, and stacking target substrate on metal substrate-graphene layer to form stacked structure.

GONG K

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V