国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC
发明人 ZHANG Z（3）
公开年 2015（2）
申请年 2015（3）
专利权人

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Oxide substrate-assisted preparation of large-size monocrystalline graphene by placing metal foil on oxide substrate, and growing high-quality large-size monocrystalline graphene on metal foil surface.

LIU K, ZHANG Z, XU X, YU D, WANG E

Preparing germanium quantum dot used in photodetector element, by cleaning substrate to remove contaminants, transferring single atomic graphene layers on cleaned substrate and growing germanium quantum dot on graphene layer.

YANG Y, WANG R, ZHANG Z, ZHANG J