国家/地区 美国（4） 欧洲专利局（EPO）（3） 世界知识产权组织（3） 中国（2） 日本（2） 韩国（2）
IPC部 C（4）
IPC大类 C01（4） C30（4） C23（3）
B82（2）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人
公开年 2015（4）
申请年 2014（2） 
专利权人

Forming graphene single crystal domain on substrate, comprises contacting substrate with passivating gas to create low nucleation site density substrate, and contacting the resultant with working gas at first elevated temperature.

COLOMBO L, RUOFF R S, HAO Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z