国家/地区 中国（24）
IPC部 C（24）
IPC大类 C30（24） C23（7） C01（5）
B82（3） H01（3）
IPC小类 C30B（24）
IPC C30B029/02（16） C30B025/00（8） C23C016/26（5）
C30B025/02（5） C30B025/18（5） C01B031/04（4）
B82Y030/00（3） B82Y040/00（3） C23C016/02（3）
C01B031/02（2） C23C016/56（2） C30B023/00（2）
C30B025/08（2） C30B025/14（2）
发明人 CHAI Z（4） HAN D（4） HAO Y（4）
WANG D（4） YAN Y（4） ZHANG J（4）
NING J（3） LI X（2） LIN S（2）
WANG C（2） WANG L（2） ZHANG H（2）
公开年 2014（11） 2013（10） 2015（3）
申请年 2013（24）
专利权人 UNIV XIDIAN（4） SHANGHAI INS.（3） HANGZHOU GEL.（2） UNIV NANCHAN.（2）

Two-dimensional carbon-nitrogen single crystal alloy comprises carbon skeleton of graphene and doping nitrogen atom.

CUI P, ZENG Z, ZHANG H, ZHANG Z

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J

Graphical graphene doping method involves placing working gas mixture of helium and doping gas into plasma generating device, applying high voltage, and discharging working gas at room temperature with atmospheric pressure plasma.

YU Y, WU Y, YE D, LIU L

Treating waste sulfuric acid from a graphene producing process, by collecting the waste sulfuric acid, filtering, depositing to obtain a transparent sulfuric acid waste, and then adding water to obtain a solution of dilute sulfuric acid.

ZHU J, CAO F, HOU S, XU S

Preparation of monocrystalline graphene involves performing primary heat treatment of metal substrate, growing monocrystalline graphene, etching, reducing density of graphene, growing graphene, etching and repeating growing and etching.

CHENG H, MA T, REN W

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y