国家/地区 美国（13）
IPC部 C（13）
IPC大类 C30（13） C01（11） H01（7）
C23（6） B82（4） B01（2）
C09（2）
IPC小类 C30B（13）
IPC C30B029/02（8） C01B031/04（7） C23C016/26（5）
C01B032/182（4） C30B025/18（4） B82Y030/00（3）
B82Y040/00（3） C01B032/184（3） C01B032/186（3）
C23C014/06（3） C23C016/02（3） C01B032/194（2）
C23C014/34（2） C23C028/00（2） C30B029/14（2）
发明人 MIWA T（2） MOMO J（2） NOMOTO K（2）
公开年 2016（13）
申请年 2015（8）  2016（4） 
专利权人 SEMICONDUCTO.（2）

Method for synthesizing multi-layer graphene e.g. trilayer graphene, involves heat-treating catalytic metal layer on substrate while supplying methane gas, and synthesizing multi-layer graphene on heat-treated catalytic metal layer.

HAM M, SON M, HAM M H, SON M W, XIAN W, SUN M

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Production of functionalized graphene for lithium-ion batteries involves milling crystalline graphite in the presence of electrolyte solution to produce thinned intermediate material, combining with other electrolyte solution, and milling.

BOZALINA M, PERRET P, NAZARPOUR S, NAZARPOUR S S N

Method for manufacturing single-crystal graphene sheet, involves heat treating catalyst layer and carbonaceous material in one of inert atmosphere and reducing atmosphere to form single-crystal graphene sheet.

CHOI J, SHIN H, YOON S, HAN J

Semiconductor device for e.g. power switching device, has graphene layer that is synthesized without metallic catalyst, and gallium nitride-based layer that is provided over graphene layer.

ROBINSON J A, REDWING J M, SADWICK L P, GAGNON J C

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Preparation of graphene, involves mixing inorganic salt with phthalocyanine material uniformly, splitting and separating under protecting gas to obtain highly plane oriented graphene material.

SUN X, WANG Y, DONG G