国家/地区 中国（19）
IPC部 C（19）
IPC大类 C30（19） C01（9） C23（6）
B82（4） H01（3） C09（2）
IPC小类 C30B（19）
IPC C30B029/02（12） C01B031/02（6） C01B031/04（5）
B82Y040/00（4） C23C016/26（4） C30B025/18（4）
B82Y030/00（3） C23C016/02（3） C30B025/00（3）
C30B025/02（3） C30B029/64（3） C01B032/184（2）
C01B032/188（2） C09D001/00（2） C09D001/04（2）
发明人 LI S（3） CHEN X（2） JIN H（2）
LIU S（2） PENG P（2） WANG Y（2）
公开年 2011（9） 2012（8） 2013（2）
申请年 2011（19）
专利权人 HEFEI YUNRON.（2） PENG P（2）

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bracket for growing graphene, has inner edge and outer edge which are wound more than circle to form structure more than one layer.

JIN H, PENG P

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Making high-quality graphene involves processing graphene substrate by reducing defect, placing precursor on substrate by transferring graphene sheet, precipitating/growing graphene with carbon tube and growing precursor into graphene strip.

GUO W, YIN J, ZHOU J

Method for preparing regular graphene single-crystal domain utilized for graphene apparatus, involves forming aromatic compound as regular graphene single-crystal domain on metal surface by molecule self-assembly technology.

CHEN X, LIU L, LIU S, WANG L

Vapor phase epitaxy carbon fiber assembly used as electrode material of lithium cell, is aggregate of vapor growth carbon fiber having tubular graphene layer structure, and average fiber outer diameter in preset range.

HITOE Y, SUZUKI J, SATO H, KAWASHIMA S, SUZUKI A

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X