国家/地区 日本（63）
IPC部 B（63）
IPC大类 B32（63）
IPC小类 B32B（63）
IPC C01B031/04（63）
发明人 CHOI J（4） CHOI J Y（4） CHIBA G（3）
CHIBA Y（3） IN Z（3） KIMURA N（3）
NAGATA T（3） OGUNI T（3） OSADA T（3）
SHIMIZU K（3） SHIN H J（3） YOON S（3）
YOSHIHIRO C（3） CHIU G（2） DATSKOS P G（2）
公开年 2012（18） 2011（8） 2009（7） 2014（7） 2015（7） 2010（6） 2013（6） 2016（4）
申请年 2012（13）  2011（11）  2013（10）  2009（9）  2010（7）  2014（4）  2015（4）  2008（2）  2016（2） 
专利权人 SAMSUNG ELEC.（5） JX NIPPON MI.（3） NIPPON MININ.（3） NIPPON MININ.（3）
SEMICONDUCTO.（3） SONY CORP（3） BASF SE（2） EMPIRE TECHN.（2）
HON HAI PREC.（2） HONGFUJIN PR.（2） KIMURA N（2） NIPPON MININ.（2）
SHIMIZU K（2） UNIV MANCHES.（2） UNIV RICE WI.（2） UNIV RUTGERS.（2）
UNIV SINGAPO.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV TSINGHU.（2）

Graphene compound for barrier element and clear packaging for product comprises optionally functionalized graphene directly bonded to nitrogen-containing compound.

ZHENG S

Production of graphene hybrid material for electronic devices e.g. microsupercapacitor, involves exposing precursor material and associating pseudocapacitive material with laser-induced graphene which is derived from precursor material.

TOUR J M, LI L, PENG Z, ZHANG J, TOUR J

Article useful for delaminating graphene layer from growth substrate, comprises graphene layer on growth substrate and polarized ferroelectric polymer layer on the graphene layer.

OZYILMAZ B, MARTIN FERNANDEZ I, TOH C T, MARTIN F I, AZYILMAZ B

Method for transferring high-quality chemical vapor deposition-grown monolayers of graphene from copper formation substrates to target substrates, involves transferring graphene layer formed on formation substrate to target substrate.

JOHNSON B Y, MAZUMDER P, SONI K K

Graphene composite powder material is obtained by mixing graphene powder material having specified apparent density and polymer.

LIU Z, QING Z, TANG C, ZHAO Y, ZHOU X, HU J, QIN Z, WANG G

Use of reduced graphene oxide laminate membrane as barrier material in which reduced graphene oxide is formed from reduction of graphene oxide with reducing agent.

RAVEENDRANNAIR R, SU Y, GEIM A, RAVEENDRAN N R

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V