国家/地区 日本（3）
IPC部 C（3）
IPC大类 C23（3） C30（3） B82（2）
C01（2）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人
公开年 2013（2）
申请年 2012（3）
专利权人

Epitaxial structure comprises substrate having patterned epitaxial growth surface defining grooves, graphene layer covering patterned epitaxial growth surface, and epitaxial layer on patterned epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G