• 文献标题:   Bias free gap creation in bilayer graphene
  • 文献类型:   Article
  • 作  者:   DAVENPORT AR, HAGUE JP
  • 作者关键词:   bilayer graphene, electronphonon interaction, electron band gap, bias free, correlated electron
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Open Univ
  • 被引频次:   2
  • DOI:   10.1088/0953-8984/26/22/225601
  • 出版年:   2014

▎ 摘  要

For graphene to be utilized in the digital electronics industry the challenge is to create bandgaps of order 1 eV as simply as possible. The most successful methods for the creation of gaps in graphene are (a) confining the electrons in nanoribbons, which is technically difficult or (b) placing a potential difference across bilayer graphene, which is limited to gaps of around 300 meV for reasonably sized electric fields. Here we propose that electronic band gaps can be created without applying an external electric field, by using the electron-phonon interaction formed when bilayer graphene is sandwiched between highly polarisable ionic materials. We derive and solve self-consistent equations, finding that a large gap can be formed for intermediate electron-phonon coupling. The gap originates from the amplification of an intrinsic Coulomb interaction due to the proximity of carbon atoms in neighbouring planes.