• 文献标题:   Electronic properties of 1H-MoS2 clusters grown on graphene oxide
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   GALVAN DH, FUENTESMOYADO S, ESTRADACRUZ JFD, SHELYAPINA MG
  • 作者关键词:   dehydrodesulphurisation, tightbinding, catalyst, electronic structure calculation
  • 出版物名称:   INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
  • ISSN:   1475-7435 EI 1741-8151
  • 通讯作者地址:   Univ Nacl Autonoma Mexico
  • 被引频次:   0
  • DOI:   10.1504/IJNT.2016.074523
  • 出版年:   2016

▎ 摘  要

Here we report on the results of our theoretical study of 1H-MoS2 clusters grown on graphene oxide. First, we studied graphene cluster, graphene oxide (1,2) and (1,3) ether-like monolayers with a Stone-Wales defect. Secondly, a 1H-MoS2 nanoparticle was grown over the defect creating a sandwich like structure. For all considered structures energy bands as well as total and partial density of states (DOS) were calculated in order to inquire about their electronic behaviour. It has been found that for graphene oxide (1,2) ether-like with 1H-MoS2 cluster located over the defect and either terminating as Mo-or S-edges, it behaves like a semi metal, while for graphene oxide (1,3) ether-like it yields semiconductor behaviour, respectively. Our main concern was the sandwich, in which total and partial DOS indicate a strong hybridisation of bands formed by C p-, S p-, Mo d-especially for graphene oxide (1,3) Mo-or S-edges.