• 文献标题:   Coupled Quantum Dots in Bilayer Graphene
  • 文献类型:   Article
  • 作  者:   EICH M, PISONI R, PALLY A, OVERWEG H, KURZMANN A, LEE Y, RICKHAUS P, WATANABE K, TANIGUCHI T, ENSSLIN K, IHN T
  • 作者关键词:   bilayer graphene, electrostatic confinement, coupled quantum dot, gatetunable tunnel barrier
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Swiss Fed Inst Technol
  • 被引频次:   9
  • DOI:   10.1021/acs.nanolett.8b01859
  • 出版年:   2018

▎ 摘  要

Electrostatic confinement of charge carriers m bilayer graphene provides a unique platform for carbon-based spin, charge, or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multiquantum dot system We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bilayer graphene, we have the possibility to form tunnel barriers using different mechanisms. We can exploit the ambipolar nature of bilayer graphene where pn-junctions form natural tunnel barriers. Alternatively, we can use gates to form tunnel barriers, where we can vary the tunnel coupling by more than 2 orders of magnitude tuning between a deeply Coulomb blockaded system and a Fabry-Perot-like cavity. Demonstrating such tunability is an important step toward graphene-based quantum computation.