▎ 摘　　要

The influence on sulphur content in term of thiourea (TU) concentration on the properties of nickel sulphide (NiS)-reduced graphene oxide (rGO) has been reported in this paper. The effect of sulphur content on the performance of dye-sensitized solar cell (DSSC) using NiS-rGO counter electrode (CE) has also been investigated. The source of sulphur is TU. The sample has been prepared via modified Hummers's method assisted with spin coating technique. The cell using NiS-rGO CE prepared with 1.20 M TU yielded the highest power conversion efficiency (eta) of 1.42%. This is due to this cell has the lowest series resistance (Rb) and charge transfer resistance at the interface of NiS-rGO CE/electrolyte (Rct) with the value of 0.44 and 4.09 ohm, respectively. It is also due to the sample with 1.20 M TU owns the highest reduction current (J). The finding of this work reveals that NiS-rGO is able to substitute platinum as CE for DSSC.