• 文献标题:   Moire-Potential-Induced Band Structure Engineering in Graphene and Silicene
  • 文献类型:   Review, Early Access
  • 作  者:   ZHAO MT, ZHUANG JC, CHENG QF, HAO WC, DU Y
  • 作者关键词:   flat band, graphene, moire pattern, silicene
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:   Beihang Univ
  • 被引频次:   3
  • DOI:   10.1002/smll.201903769 EA SEP 2019
  • 出版年:  

▎ 摘  要

A moire pattern results from the projection of one periodic pattern to another with relative lattice constant or misalignment and provides great periodic potential to modify the electronic properties of pristine materials. In this Review, recent research on the effect of the moire superlattice on the electronic structures of graphene and silicene, both of which possess a honeycomb lattice, is focused on. The moire periodic potential is introduced by the interlayer interaction to realize abundant phenomena, including new generation of Dirac cones, emergence of Van Hove singularities (vHs) at the cross point of two sets of Dirac cones, Mott-like insulating behavior at half-filling state, unconventional superconductivity, and electronic Kagome lattice and flat band with nontrivial edge state. The role of interlayer coupling strength, which is determined by twist angle and buckling degree, in these exotic properties is discussed in terms of both the theoretical prediction and experimental measurement, and finally, the challenges and outlook for this field are discussed.