▎ 摘　　要

Hysteretic behavior in ion gel-graphene hybrid terahertz (THz) modulator is presented. The ion gel gated graphene modulator was designed and fabricated by conventional wet-based graphene transfer method. The modulation performance and hysteretic behavior of the device was characterized by THz time-domain spectroscopy. The dependence of hysteresis on the sweeping voltage rate and sweeping range was explored in a continuous wave terahertz system. The temporal response of the sample was also measured and fitted by a double-exponential expression, which indicated that there were two mechanisms that might cause the hysteresis in the THz modulator. This hysteretic behavior is promising in developing nonvolatile memory devices. (C) 2019 Elsevier Ltd. All rights reserved.