• 文献标题:   Ultrascaled Resonant Tunneling Diodes Based on BN Decorated Zigzag Graphene Nanoribbon Lateral Heterostructures
  • 文献类型:   Article
  • 作  者:   SANAEEPUR M, JAFARI MR, ESMAEILI M
  • 作者关键词:   boron nitride bn, lateral heterostructure, nonequilibrium green s function negf, resonant tunneling diode rtd, ultrascaled, zigzag graphene nanoribbon zgnr
  • 出版物名称:   IEEE TRANSACTIONS ON ELECTRON DEVICES
  • ISSN:   0018-9383 EI 1557-9646
  • 通讯作者地址:   Arak Univ
  • 被引频次:   3
  • DOI:   10.1109/TED.2019.2958421
  • 出版年:   2020

▎ 摘  要

Ultrascaled 2-D resonant tunneling diodes (RTDs), with dimensions of exhibiting negative differential resistance (NDR) are proposed. Zigzag graphene nanoribbons (ZGNRs) are used as the base material. Boron nitride (BN) decoration is utilized to open a gap in a ZGNR energy band structure. Within the framework of nonequilibrium Green's function (NEGF) and tight-binding (TB) approximated Hamiltonian, the device operation of proposed RTDs is investigated. The effect of well and barrier length modulation on the device figures is studied. Results show that extremely small changes, in the order of a few angstroms, in the well or the barrier dimensions translate to a significant change in device figures.