▎ 摘　　要

We report the synthesis of large-area graphene films on Mo foils by chemical vapor deposition. X-ray diffraction indicates that the dissolution and segregation process governs the growth of graphene on Mo foils. Among all processing parameters investigated, the cooling rate is the key one to precisely control the thickness of graphene film. By optimizing the cooling rate between 1.5 and 10 degrees C/s, we managed to achieve graphene films ranging from mono- to tri-layer. Their uniformity and thickness were confirmed by Raman spectroscopy and optical measurements. The carrier mobility of films reaches as high as 193 cm(2) V-1 s(-1). Our experiments show that the Mo substrate has the similar simplicity and large tolerance to processing conditions as Cu. (C) 2012 Elsevier Ltd. All rights reserved.