▎ 摘　　要

This paper is the first study of the Hall effect in the Efros-Shklovskii variable range hopping conduction regime in the free-standing reduced graphene oxide paper (RGOP). It was found that the temperature dependence of the Hall mobility in RGOP agrees with the Hall effect theory for hopping conduction in disordered semiconductors. In the wide temperature range of 300-25 K, the Hall mobility decreases exponentially with decreasing tem-perature. The variable range hopping conduction channel is the main one contributing to the Hall effect in the RGOP even at room temperature. It was shown that the Hall effect in the RGO can have both positive and negative signs over the entire temperature range. The reduction of disorder and rise in the sp(2)-carbon fraction increase the hopping Hall mobility of charge carriers.