▎ 摘　　要

Extensive research on the investigation of properties of graphene-based materials exhibit a large dispersion of values for the dielectric constant epsilon; for graphene oxide (GO), reported epsilon values range from 2 to 10(6). In this regard, we aim to study in detail GO's epsilon by in situ temperature XRD, FTIR, impedance measurements and TGA in wet and dry samples. Our findings reveal that epsilon'S GO strongly depends upon the frequency range and moisture content; here, we report 3 frequency regimes: (1) 10(4) < epsilon < 10(6); 1 < f < 600 Hz dominated by Wartburg pseudocapacitance; (2) 10(4) < epsilon < 10(2); 5 X 10(2) < f < 2 x 10(5)Hz dominated by GO groups-water interface layer ; and (3) 30 < epsilon < 50; 5 x 10(5) < f < 5 x 10(7)Hz dominated by bulk GO properties. In summary, our findings reveal a more complex phenomena that dominates the dielectric constant in GO which can be advantageously used in the design of advanced materials.