• 文献标题:   Growth of adlayers studied by fluorination of isotopically engineered graphene
  • 文献类型:   Article
  • 作  者:   WEIS JE, COSTA SD, FRANK O, KALBAC M
  • 作者关键词:   chemical vapor deposition, graphene, isotope labeling, raman spectroscopy
  • 出版物名称:   PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS
  • ISSN:   0370-1972 EI 1521-3951
  • 通讯作者地址:   Acad Sci Czech Republic
  • 被引频次:   4
  • DOI:   10.1002/pssb.201451169
  • 出版年:   2014

▎ 摘  要

Chemical vapor deposition on copper is currently one of the most prospective preparation techniques of large area graphene films. There are still many undisclosed questions regarding the growth process and its conditions. The adlayer formation belongs to those, not only because of the need of uniform monolayers, but also due to the increasing demand for high-coverage bilayers. The combination of Raman spectroscopy, isotopic labeling and functionalization using fluorine can provide the necessary insight into the CVD growth process. The disorder degree caused by the fluorination is unambiguously distinguished by Raman mapping and evaluation of more than 1000 spectra for the individual layers, suggesting the shielding of the C-13 adlayer underneath the continuous C-12 top layer. [GRAPHICS] High resolution Raman map of the D/G peak intensity ratio of the C-12 component in the C-13/C-12 region of the studied isotopically labeled bilayer graphene and a scheme depicting the adlayer growth at the bottom. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim