▎ 摘　　要

We demonstrate a method to control the Fermi level around the Van Hove singularity (VHS) in Li-intercalated graphene on the SiC substrate. By angle-resolved photoemission spectroscopy, we observed a clear Lifshitz transition in the vicinity of the VHS when the thickness of graphene exceeds four layers. We calculated the band structure of a multilayer system with different stacking sequences of graphene and Li layer. The so-called stage 2 model reproduces the Lifshitz transition, where Li occupies every other interlayer of graphene. In addition, we found that a sizable Schottky barrier is formed between graphene and the substrate. These properties allow us to explore the electronic phase diagram around the VHS by controlling the thickness.