▎ 摘　　要

Grazing-incidence x-ray diffraction (GID) was employed to probe the structure of atomically thin carbon layers on SiC(0001): a so-called buffer layer (BL) with a 6(root 3 x root 3)R30 degrees. periodicity, a monolayer graphene (MLG) on top of the BL, and a bilayer graphene (BLG). The GID analysis was complemented by Raman spectroscopy. The lattice parameter of each layer was measured with high precision by GID. The BL possesses a different lattice parameter and corrugation when it is uncovered or beneath MLG. Our results demonstrate that the interfacial BL is mainly responsible for the strain in MLG. By promoting its decoupling from the substrate via intercalation, it turns into graphene, leading to a simultaneous relaxation of the MLG and formation of a quasi-free-standing BLG.