▎ 摘　　要

Here we present results on the influence of low-energy plasma of different duration (from 8 to 60 s) on graphene-containing layers deposited on different surfaces (diamond-like carbon and SiO) and their subsequent annealing. We used plasma with a dose of 10 intended to impact the upper 1 nm thick layer of the treated film. The influence was evaluated by Raman and X-ray photoelectron spectroscopy. It was found that the low-energy plasma treatment significantly worsened the quality of graphene and defected graphene even though this was expected. However, a significant self-healing of the modified samples was observed after rapid radiation annealing by 1 kW halogene lamp in vacuum: the FWHM of the 2D band recovers about 90 % of its initial value of 45 cm, the intensity ratios I and I reach 1.6 and 2.5, respectively. In addition, the final 2D band can be deconvoluted into 6 peaks with FWHM of about 24 cm pointing to formation of three-layered graphene.