▎ 摘　　要

We investigated the use of the shrinkage of SU-8 resist caused by thermal annealing to apply strain into graphene grown by the chemical-vapor-deposition (CVD) method. We demonstrate that the shrinkage of resist deposited on top of graphene on a substrate induces a local tensile strain within a distance of 1-2 mu m from the edge of the resist. The thermal shrinkage of SU-8 will allow us to design the local strain in graphene on substrates. We also show that the shrinkage induces a large tensile strain in graphene suspended between two bars of SU-8. We expect that a much larger strain can be induced by suppressing defects in CVD-grown graphene.