• 文献标题:   Hybrid graphene/organic semiconductor field-effect transistors
  • 文献类型:   Article
  • 作  者:   HA TJ, AKINWANDE D, DODABALAPUR A
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   21
  • DOI:   10.1063/1.4737939
  • 出版年:   2012

▎ 摘  要

In this letter, we report on the improvement of the electronic properties of graphene by capping with pi-conjugated organic semiconductor molecules. The off-state current is reduced while the on-state current and mobility are either unaffected or increased. The semiconductors employed included alpha-sexithiophene and hexadecafluorocopperphthallocyanine. Removal of the organic semiconductor layer results in a return to the original electronic properties. This suggests that weak electronic interactions with organic semiconductors can be a promising approach to favorably alter the transport properties of graphene. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737939]