▎ 摘　　要

In this letter we present our preliminary results about the preparation of graphene and carbon nanosheets by thermal annealing of graphite layer on silicon substrate in vacuum and at temperature 900 degrees C. The surface area of about several tens of micrometers and curved at the ends. The carbon nanosheets are very clean and look like a piece of paper. Investigations with Raman showed three main peaks D, G, G' and small peak at 2420 cm(-1). This method is considered to be a simple and cheap method for preparing the carbon nanosheets directly on the silicon substrate for the application in the electronics. (C) 2011 Elsevier Ltd. All rights reserved.