▎ 摘　　要

The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) meets the problem of the Power Consumption (PC) can not be effecively deceased guided by the Moore's Law as before. The GFET has the problem of the device can not be effectively turned off, since the band-gap of the graphene is zero. To solve these problems, noticing the amount of the carriers in the 2 dementional semiconductor material is limited, we propose a Matel-Semi-Insulator-Semiconductor Field-Effect-Transistor (MSIS-FET) to replace the traditional MOS-FET. We verify our idea by fabricating the graphene MSIS-FETs using the natural Aluminium-oxide (Al-oxide) as the semi-insulator gate dielectric. From MSIS-FETs fabricated, we obtain following experimental results. The graphene MSIS-FET is turned off very well, a recorded high Ids on/off ratio of 5 x 10(7) is achieved. A saddle and close-loop shape transfer feature of Ids-Vgs is obtained first time for transistors. A non-volatile memory characteristics is observed. A carrier re-injection principle and a super-Low P-C mechanism for semiconductor devices and integrated circuits (ICs) are found from the transfer feature of the graphene MSIS-FET. It is shown that the PC of the semiconductor devices and (ICs) can be reduced by over three orders of magnitude by using this new mechanism.