• 文献标题:   Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source
  • 文献类型:   Article
  • 作  者:   HOFRICHTER J, SZAFRANEK BN, OTTO M, ECHTERMEYER TJ, BAUS M, MAJERUS A, GERINGER V, RAMSTEINER M, KURZ H
  • 作者关键词:   graphene, phase segregation, carbon electronic, raman spectroscopy, scanning tunneling microscopy
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   IBM Res GmbH
  • 被引频次:   107
  • DOI:   10.1021/nl902558x
  • 出版年:   2010

▎ 摘  要

We report on a method for the fabrication of graphene on a silicon dioxide substrate by solid-state dissolution of an overlying stack of a silicon carbide anti a nickel thin film. The carbon dissolves in the nickel by rapid thermal annealing. Upon cooling, the carbon segregates to the nickel surface forming a graphene layer over the entire nickel surface, By wet etching of the nickel layer, the graphene layer was allowed to settle on the original substrate. Scanning tunneling microscopy (STM) as well as Raman spectroscopy has been performed for characterization Of the layers. Further insight into the morphology of the layers has been gained by Raman mapping indicating micrometer-size graphene grains. Devices for electrical measurement have been manufactured exhibiting a modulation of the transfer current. by backgate electric fields. The presented approach allows For mass fabrication of polycrystalline graphene without transfer steps while using only CMOS compatible process steps.