• 文献标题:   Enhanced photovoltaic properties in graphene/polycrystalline BiFeO3/Pt heterojunction structure
  • 文献类型:   Article
  • 作  者:   ZANG YY, XIE D, WU X, CHEN Y, LIN YX, LI MH, TIAN H, LI X, LI Z, ZHU HW, REN TL, PLANT D
  • 作者关键词:   bismuth compound, current density, graphene, photoconductivity, photoemission, photovoltaic effect, platinum, thin film
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   McGill Univ
  • 被引频次:   74
  • DOI:   10.1063/1.3644134
  • 出版年:   2011

▎ 摘  要

We report the enhanced photovoltaic properties in polycrystalline BiFeO3 (BFO) thin films with graphene as top electrodes. The short circuit current density (J(sc)) and open circuit voltage of the heterojunction are measured to be 25 mu A/cm(2) and 0.44 V, respectively, much higher than the reported values for polycrystalline BFO with indium tin oxide (ITO) as top electrodes. Influence of HNO3 treatment on the photovoltaic properties is studied, and a significant photocurrent density improvement from 25 mu A/cm(2) to 2.8 mA/cm(2) is observed. A metal-intrinsic semiconductor-metal model is proposed to explain the graphene induced enhancement comparing with traditional ITO. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3644134]