▎ 摘　　要

We report the direct growth of graphene on a dielectric SiO2 surface by utilizing complementary metal oxide semiconductor compatible germane as a gas-phase catalyst. Results of Raman spectroscopy and XPS confirmed that the synthesized graphene consist of a sp(2) hybridized carbon network. We were able to fabricate graphene field effect transistors without the wet etching process, and the calculated mobility was similar to 160 cm(2)/V.s at high carrier concentration (n = 3 x 10(12) cm(-2)). Furthermore, the crystallinity and morphology of graphene is easily controlled from single-layer graphene to graphene nanowall structures by adjusting the reaction conditions. The results of this study verify the promising catalytic graphene growth method on a non-catalytic insulating surface without metal contaminations. Published by AIP Publishing.