• 文献标题:   The effect of doping and strain on superconductivity of T-graphene
  • 文献类型:   Article
  • 作  者:   QIAO SX, SUI CH, YANG L, LI YP, SUN YX, ZHANG NX, BAI JQ, JIAO N, LU HY
  • 作者关键词:  
  • 出版物名称:   PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • ISSN:   1463-9076 EI 1463-9084
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1039/d2cp03155h EA SEP 2022
  • 出版年:   2022

▎ 摘  要

As an allotrope of graphene, T-graphene was predicted to be an intrinsic two-dimensional (2D) superconductor with a superconducting critical temperature (T-c) of about 20.8 K [Gu et al., Chin. Phys. Lett. 36, 097401 (2019)]. In this work, based on first-principles calculations, hole doping and biaxial tensile strain (BTS) are considered to modulate the electron-phonon coupling (EPC) and superconductivity of T-graphene. It is found that the EPC constant of T-graphene is 0.807 and the calculated critical temperature T-c is 28.2 K at a doping level of 0.5 hole per unit cell (3.31 x 10(14) cm(-2)) and 12% BTS. Furthermore, when 0.8 hole per unit cell (5.43 x 10(14) cm(-2)) doping and 10% BTS are applied, the EPC constant is 0.939, and the T-c can be boosted to 35.2 K, which is higher than those of the pristine T-graphene and many other 2D carbon-based superconductors.