• 文献标题:   Photo-thermoelectric detection of cyclotron resonance in asymmetrically carrier-doped graphene two-terminal device
  • 文献类型:   Article
  • 作  者:   KINOSHITA K, MORIYA R, ARAI M, MASUBUCHI S, WATANABE K, TANIGUCHI T, MACHIDA T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Univ Tokyo
  • 被引频次:   4
  • DOI:   10.1063/1.5045731
  • 出版年:   2018

▎ 摘  要

Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated h-BN/graphene/h-BN two-terminal device. A graphite local bottom gate was fabricated in addition to a p-doped Si global back gate. By tuning the two gate voltages, an in-plane graphene junction having an asymmetric carrier-doping profile was created. With the help of this asymmetric structure, the photo-thermoelectric voltage generated in the vicinity of the metal-electrode/graphene junction was detected. At a low temperature and in the presence of a magnetic field, a photo-induced voltage was measured under the irradiation of an infrared laser (lambda = 9.28-10.61 mu m). We observed a strong enhancement of the photovoltage signal under the cyclotron resonance condition, at which the energy of excitation coincides with a transition between Landau levels. These results highlight the possibility of using the photo-thermoelectric effect in graphene for THz photo-detection. Published by AIP Publishing.