▎ 摘　　要

Chemical vapor deposition using a rapid thermal annealing (RTA) system at atmospheric pressure with diluted methane gas (0.48 vol%)/Ar enabled the growth of high-quality multi-layered graphene on a Cu substrate at 1000 degrees C within a short time span. The minimum temperature rise time (including the reduction time) and growth time were 300 and 90 s, respectively. These conditions gave graphene films exhibiting 98.6% substrate coverage. The lateral sizes of the resulting graphene domains ranged from 0.2 to 1.2 mu m with an average size of 0.46 mu m while the film thicknesses were estimated to range from two to several layers based on the Raman 2D/G peak ratios. The Raman D peak indicative of defects was not detected on the graphene films. Precise control of the growth temperature within the range of 900 degrees C-1000 degrees C promoted reduction reactions and improved the quality of the graphene.