▎ 摘　　要

We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm(2) V-1 s(-1). The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. (C) 2014 Elsevier Ltd. All rights reserved.