• 文献标题:   Magnetism induced by excess electrons trapped at diamagnetic edge-quantum well in multi-layer graphene
  • 文献类型:   Article
  • 作  者:   ZHANG X, WANG C, SUN CQ, DIAO DF
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Shenzhen Univ
  • 被引频次:   16
  • DOI:   10.1063/1.4891558
  • 出版年:   2014

▎ 摘  要

In this paper, we clarified a robust mechanism of magnetism generated by excess electrons captured by edge-quantum well of diamagnetic armchair edges. Consistency between density functional theory calculations and electron cyclotron resonance experiments verified that: (1) Multi-layer armchair nanoribbons are stable with proper amounts of excess electrons which can provide net spin; (2) Since under-coordination induces lattice relaxation and potential well modulation, electrons tend to be trapped at edges; and (3) Neither large amount of excess electrons nor positive charges can induce magnetism. This work shed light on the development of graphene devices in its magnetic applications. (c) 2014 AIP Publishing LLC.