• 文献标题:   Even-denominator fractional quantum Hall states at an isospin transition in monolayer graphene
  • 文献类型:   Article
  • 作  者:   ZIBROV AA, SPANTON EM, ZHOU H, KOMETTER C, TANIGUCHI T, WATANABE K, YOUNG AF
  • 作者关键词:  
  • 出版物名称:   NATURE PHYSICS
  • ISSN:   1745-2473 EI 1745-2481
  • 通讯作者地址:   Univ Calif Santa Barbara
  • 被引频次:   16
  • DOI:   10.1038/s41567-018-0190-0
  • 出版年:   2018

▎ 摘  要

In monolayer graphene, the two inequivalent sublattices of carbon atoms combine with the electron spin to give electrons a nearly fourfold degenerate internal isospin. At high magnetic fields, the isospin degeneracy increases the already large intrinsic degeneracy of the two-dimensional Landau levels, making low-disorder graphene systems a versatile platform for studying multicomponent quantum magnetism. Here, we describe magnetocapacitance experiments of ultraclean monolayer graphene devices in which a hexagonal boron nitride substrate breaks the symmetry between carbon sublattices. We observe a phase transition in the isospin system, which is marked by unusual transitions in odd-denominator fractional quantum Hall states for filling factors nu near charge neutrality and by the unexpected appearance of incompressible even-denominator fractional quantum Hall states at nu = +/- 1/2 and nu = +/- 1/4. We propose a scenario in which the observed states are multicomponent fractional quantum Hall states incorporating correlations between electrons on different carbon sublattices, associated with a quantum Hall analogue of the Neel-to-valence bond solid transition that occurs at charge neutrality.