▎ 摘　　要

Three dimensional topological insulators have a thriving application prospect in broadband photodetectors due to the possessed topological quantum states. Herein, a large area and uniform topological insulator bismuth telluride (Bi2Te3) layer with high crystalline quality is directly epitaxial grown on GaAs(111)B wafer using a molecular beam epitaxy process, ensuring efficient out-of-plane carriers transportation due to reduced interface defects influence. By tiling monolayer graphene (Gr) on the as-prepared Bi2Te3 layer, a Gr/Bi2Te3/GaAs heterojunction array prototype was further fabricated, and our photodetector array exhibited the capability of sensing ultrabroad photodetection wavebands from visible (405 nm) to mid-infrared (4.5 mu m) with a high specific detectivity (D*) up to 10(12) Jones and a fast response speed at about microseconds at room temperature. The enhanced device performance can be attributed to enhanced light-matter interaction at the high-quality heterointerface of Bi2Te3/GaAs and improved carrier collection efficiency through graphene as a charge collection medium, indicating an application prospect of topological insulator Bi2Te3 for fast-speed broadband photodetection up to a mid-infrared waveband. This work demonstrated the potential of integrated topological quantum materials with a conventional functional substrate to fabricate the next generation of broadband photodetection devices for uncooled focal plane array or infrared communication systems in future.