▎ 摘　　要

A simple methyl-terminated (-CH3) surface passivation approach has been employed to enhance the performance of the bilayer graphene/Si nanohole array (BLG/SiNH array) Schottky junction based self-powered near infrared photodetector (SPNIRPD). The as-fabricated SPNIRPD exhibits high sensitivity to light at near infrared region at zero bias voltage. The I-light/I-dark ratio measured is 1.43 x 10(7), which is more than an order of magnitude improvement compared with the sample without passivation (similar to 6.4 x 10(5)). Its corresponding responsivity and detectivity are 0.328 AW(-1) and 6.03 x 10(13) cmHz(1/2)W(-1), respectively. The demonstrated results have confirmed the high-performance SPNIRPD compared with the photo-detectors of similar type and its great potential application in future optoelectronic devices. (C) 2015 Optical Society of America