▎ 摘　　要

Graphene-carbon nanotube (CNT) hybrid materials are directly synthesized on an unpolished SiO2 substrate by the use of a chemical vapor deposition (CVD) system with a two-temperature reactor. The two-temperature reactor utilized here proves more efficient than that of the one-temperature reactor. Potential candidate substrates for the formation of the graphene-CNT hybrid materials are discussed in detail. SEM and Raman results demonstrate that the unpolished SiO2 base is the most fitting substrate for the graphene-CNT hybrid CVD growth. These results open the way for direct and high-efficiency production of graphene-CNT hybrid materials with high conductivity and transmittance.